Oleg Igorevich Rabinovich


Education

2005Master of Science (Electronics and Microelectronics), Moscow State Institute of Steel and Alloys,  2005, Diploma with honour (cum laude)
2008Ph.D. degree Semiconductor physics (Optoelectronics), Moscow State Institute of Steel and Alloys 2008

Employment

2004-present: Assistant professor, Moscow Institute of Steel and Alloys.

Research interests

  • light-emitting diodes (simulation, degradation investigations);
  • heterostructures;
  • semiconductors growth technologies;
  • materials for photodetectors and transistors.

Honorable Titles, Membership in Academies Organizations

  • Scientific adviser , Russian Academy of Natural sciences 2008
  • IEEE – Institute of Electrical and Electronics Engineers, (USA) 20010
  • SPIE – The International Society for Optical Engineering, (USA) 2006

Selected Publications

  1. E.K. Naimi, O.I. Rabinovich, V.P. Sushkov, “Degradation of AlGaInN LED performance characteristics under the ultrasonic action” // Technical digest “Compound Semiconductor Manufacturing Expo (CS-MAX)”, Р. 123-125, USA, CA, Palm Springs, 2005.
  2. O.I. Rabinovich, S.G. Nikiforov, V.P. Sushkov, A.V. Sishov, “New results of InGaN LED simulation” // Proc. of SPIE vol. 6468, Physics and Simulation of Optoelectronic Devices XV, Р. 64680U-1 – 64680U-10editors Marek Osinski, Fritz Henneberger, Yasushiko Arakawa, San Jose, California, USA, 2007.
  3. O.I. Rabinovich, V.P. Sushkov “LEDs current-voltage characteristics investigation” // section: Nanomaterials for Electronics, magnetic Systems. Abstracts Scientific and Technological Sections. vol. 1. P. 556-558, Nanotechnology International Forum, Moscow, 2008.
  4. O.I. Rabinovich, V.P. Sushkov “The study of specific features of working characteristics of multicomponent heterostructures and AlGaInN – based light-emitting diodes” // Semiconductors, № 4, vol. 43, P. 524-527, 2009.
  5. O.I. Rabinovich, N.V. Romanov, S.S. Sizov “Light-emitting diodes: some factors influence upon degradation” // Light & engineering. № 4, стр. 92-96, 2009.
  6. O.I. Rabinovich “Impurity and Indium atoms influence upon AlGaInN LEDs characteristics” 38th International Symposium on Compound Semiconductors – ISCS 2011. Compound Semiconductor Week. Berlin, Germany, P. 301-302, 2011
  7. E.K. Naimi, O.I. Rabinovich “Ultrasonic effect on multocomponent nanoheterostructures” // Crystallography reports, v.56, # 3, P. 486-490, 2011.
  8. A.R. Kushkhov, O.I. Rabinovich, D.S. Gaev “Morphology of GaSb-based island films” // Inorganic materials, P. 10-15, v. 48, № 1, 2012.
  9. Oleg I. Rabinovich “LEDs: contemporary and future targets” // Lecture notes in information technology, v.13, p.196-201, 2012
  10. Oleg Rabinovich Growth and Morphology of SbSe based Island Films // Advanced Materials Research, February, 2013 p.13-18
  11. Oleg I. Rabinovich Quantum yield of LEDs based on InGaN/GaN structures at Silicon substrates // Light&Engineering, vol. 21, № 2, Р. 78-82, 2013
  12. O.I. Rabinovich “Some Aspects of AIIIBV and AIIBVI Growth” // MRS (Materials Research Society) Fall Meeting 2013, Symposium T (sec T6) “Compound Semiconductor Materials and Devices. III-Nitride Optical Devices”, Boston, MA, USA, 2-4 December 2013, V. 1635, p. 89-93, 2013
  13. O.I. Rabinovich “InGaN and InGaP heterostructure simulation” // Journal of Alloys and Compounds. V. 586, Supplement 1, 2014, P. S258–S261.
  14. O.I. Rabinovich, S.A. Legotin, S.I. Didenko “Impurity influence on nitride LEDs” // Journal of nano and electronic physics. V.6 # 3 pp.030021-030022, 2014
  15. O.I. Rabinovich “Investigation of heterostructure influence upon characteristics based on simulation” // Bulletin of the Russian Academy of Science v.78 # 10 p.979-980, 2014