GaBiAs, a comparatively new entrant in III-V group has attracted plenty of research due to its potential applications in optoelectronics, solar cells etc. The large band bowing parameter, faster band gap reduction with Bi % with less detrimental effects and larger spin orbit splitting in GaBiAs have promised greater enhancement of device performances. Also, the possibility of altering only valence band maximum (VBM) in this material may be useful for easy extraction of photogenerated holes in the case of QW solar cells (QWSCs). In this presentation, I would discuss some of the basic properties of this material and also present some of our results.
We use cookies and metrics. By continuing to use the website, you confirm that you have read in a whole and agree with the Personal Data and Cookies Processing Policy.
We use cookies and metrics. By continuing to use the website, you confirm that you have read in a whole and agree with the Personal Data and Cookies Processing Policy.
