Schemerov Ivan VasilievichPh.D. in Engineering, Associate Professor at the Department of Semiconductor Electronics and Semiconductor Physics
Research Interests
Semiconductors, mathematical modeling of physical processes, measurement systems.
Field of knowledge according to the OECD classifier
Physics, condensed matter (UK).
2014: PhD in engineering, NUST MISIS.
2011: higher special education (microelectronics and solid state electronics).
The methodology for the analysis of relaxation capacity curves after Schottky diode voltage changing was proposed. The methodology deals with analyzing the curve as the dependence of the capacity derivative on the time logarithm. With such analysis, each monoexponential curve contributing to the relaxation curve is represented as a separate peak and may be isolated with a significant accuracy.
The main results and applications are describes in the following article: Polyakov A.Y., et al. Current relaxation analysis in AlGaN/GaN high electron mobility transistors, Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. v.35, i.1, 2017. p.011207-(1-10).
Scopus Hirsch Index — 15.
Number of articles on Scopus — 75
SPIN RSCI:
ORCID: 0000-0001-9193- 8106.
ResearcherID: A-8094-2014.
Scopus AuthorID: 57189494220.
- Anfimov I.M., Anfimov M.V., Egorov D.S., Kobeleva S.P., Pushkov K.V., Schemerov I.V., Yurchuk S.Yu., “IOP Conference Series: Materials Science and Engineering”. v.474, 2019. p.012011. DOI: 10.1088/1757-899X/474/1/012011.
- Wideband semiconductors (GaN, Ga2O3, AlGaN): Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN. Polyakov A.Y., Smirnov N.B., Yakimov E.B., Tarelkin S.A., Turutin A.V., Shemerov I.V., Pearton S.J., Bae K.B., Lee I.H. “Journal of Alloys and Compounds”. v.686, 2016. p.1044-1052. DOI: 10.1016/j.jallcom.2016.06.297.
- Perovskites characterisation: Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation. Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Saranin D.S., Le T.S., Didenko S.I., Kuznetsov D.V., Agresti A., Pescetelli S., Matteocci F., Di Carlo A. “Applied Physics Letters”. v.113, i.26, 2018. p.263501. DOI: 10.1063/1.5053845.
- Radiation effects in single-crystal silicon: Registration of selective separation effect of thermal neutrons: substantiation, experiments. Anfimov I.M.. Varlachev V.A., Drobyshevsky Yu.V., Kobeleva S.P., Nekrasov S.A., Prokhorov A.K., Stolbov S.N., Shchemerov I.V., Egorov D.S. “Voprosy atomnoy nauki i tekhniki. Seriya: Fizika radiatsionnogo vozdeystviya na radioelektronnuyu apparaturu” (Questions of atomic science and technology. Series: Physics of Radiation Effects on Electronic Equipment). 2016. N.1. pp.24-30.
- Mathematical models in physics. Current relaxation analysis in AlGaN/GaN high electron mobility transistors. Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Lee I.H., Jang T., Dorofeev A.A., Gladysheva N.B., Kondratyev E.S., Turusova Y.A., Zinovyev R.A., Turutin A.V., Ren F., Pearton S.J. “Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics”. v.35, i.1, 2017. p.011207-(1-10). DOI: 10.1116/1.4973973.
NUST MISIS, master’s course “Methods of semiconductor materials and devices characterisation”,