Ph.D. in Physics and Mathematics, Associate Professor at the Department of Semiconductor Electronics and Semiconductor Physics
Research interests
Defects in semiconductor crystals; impurity diffusion in semiconductors.
Field of knowledge according to the OECD classifier
2.02 — electronics, electronic engineering, information technologies; 2.05 — materials engineering, materials science — multidisciplinary; materials science — characterization and testing.
1998 — present: associate professor, NUST MISIS.
Development of the method for determining ultra-small deviations from stoichiometry in A2B6 semiconductor compounds. Analysis of diffusion mechanisms of impurities in germanium. Radiation defects in silicon single crystals. Thermoacceptor effect in irradiated silicon.
Scopus Hirsch Index — 10.
Number of articles on Scopus — 41.
SPIN RSCI:
ORCID: 0000-0002-
ResearcherID: A-8646-2014.
Scopus AuthorID: 6603905742.
- Turutin A.V., Vidal J., Kubasov I., Kislyuk A. M.; Kiselev D.A., Malinkovich M., ParkhomenkoY., Kholkin A, Sobolev, N..Highly sensitive magnetic field sensor based on a metglas/bidomain lithium niobate composite shaped in form of a tuning fork. J. of Magnetism and Magnetic Materials, v. 486, 2019, 165209, DOI: 10.1016/j.jmmm.2019.04.061
- Kobeleva S.P., Anfimov I.M., Anfimov M.V.,Egorov D.S., Pushkov K.V., Schemerov I.V., Yurchuk S.Y. On using photoconductivity decay to determine Si free carrier recombination lifetime: Possibilities and challenges,IOP Conference Series^ Material Science and Engineering, V 474, 2019, 012011, DOI: 10.1088/1757-899X/474/1/012011
- Tran Khanh; E. Mozhevitina, A. Khomyakov; R. Avetisov, A. Davydov, V. Chegnov; V.Antonov; S. Kobeleva, N. Zhavoronkov, I.C. Avetissov, Nonstoichiometry and luminescent properties of ZnSe crystals grown from the melt at high pressures. JOURNAL OF CRYSTAL GROWTH Том: 457, С
331-336 (2017) DOI: 10.1016/j.jcrysgro.2016.04.026 - Igor Avetissov, Khan Chang, Nikolai Zhavoronkov, Albert Davydov, Elena Mozhevitina, Andrew Khomyakov, Svetlana Kobeleva, Sergei Neustroev . Nonstoichiometry and luminescent properties of ZnSe crystals grown from melt and vapor . J Cryst. Growth, 2014 , V 401, sept., p.
686-690 - S. P. Kobeleva, I. M. Anfimov, S. Yu. Yurchuk, E. A. Vygovskaya, and B. V. Zhalnin. Influence of In0.56Ga0.44P/Ge Heterostruc ure on Diffusion of Phosphor in Germanium within the Formation of Multiple Solar Cells. TECHNICAL PHYSICS LETTERS Vol. 39 No. 1 2013.
- Belogorokhova LI; Belogorokhov AI; Gavrilov SA Timoshenko, VY Kashkarov, PK (Lisachenko, MG Kobeleva, SP .Enhanced photoluminescence and structural properties of porous silicon formed in hydrofluoric-hydrochloric solutions PHYSICA STATUS SOLIDI A-APPLIED RESEARCH Volume: 197 Issue: 1 Pages:
228-231 DOI: 10.1002/pssa.200306505 - Aminov, BA; B randt, NB Thuy, NM; Ponomarev, YG; Sudakova, MV; Kaul, AR; Graboi, IE; Tretiakov, YD; Wittig, J; Fisher, LM; Rosta, L Temperature-dependence of the critical current in yba2cu3o7-delta and bi2sr2ca1cu2o8 josephson-junction . PHYSICA
C-SUPERCONDUCTIVITY AND ITS APPLICATIONS Volume: 160 Issue:5-6 Pages: 505-510 DOI: 10.1016/0921-4534(89)90427-9. - A.V. Turutin, J.V. Vidal, I.V. Kubasov, A.M. Kislyuk, M.D. Malinkovich, Y.N. Parkhomenko, S.P. Kobeleva, O.V. Pakhomov, A.L. Kholkin, N.A. Sobolev. Magnetoelectric metglas / bidomain y+140°-cut lithium niobate composite for sensing fT magnetic fields. Appl. Phys. Lett. V112, (2018) 262906 https://doi.org/10.1063/1.5038014
- Kobeleva S.P., Anfimov I.M., Yurchuc S.Yu. . Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures. Advanced Material and Device Applications with Germanium Chapter 3, p. 31 −44. IntechOpen, 2018. DOI: 10.5772/intechopen.78347
- Vidal, João; Turutin, Andrei; Kubasov, Ilya; Kislyuk, Alexander; Malinkovich, Mikhail; Parkhomenko, Yurii; Kobeleva, Svetlana; Pakhomov, Oleg; Sobolev, Nikolai; Kholkin, Andrei. Low-frequency vibration energy harvesting with bidomain LiNbO3 single crystals. EEE Transactions on Ultrasonics, Ferroelectrics, and Frequency ControlVolume 66, Issue 9, September 2019, Номер статьи 8686147, Pages
1480-1487
“Framework for the certification of four-probe heads”, No. 121084, dated October 10, 2012, Russian Federation.
“Four-probe head”, No. 123173, dated December 20, 2012, Russian Federation.
“Integrated radiation detector cell based on a bipolar transistor with a mesh base”, No. 2427942, dated August 27, 2011, Russian federation.
Scientific supervision and teaching
I.V. Schemerov “Development and creation of a non-contact apparatus to measure semiconductor materials electrical parameters”, PhD in engineering, 2015.
2018 — present: NUST MISIS, “Physics of condensed state”, 54 hours.
2015 — present: NUST MISIS, “Device structures based on non-crystalline materials”, 51 hours.
Member of the editorial board of the “News of Universities. Materials of Electronic Engineering” journal.
2002 — present: member of the organizational committees of conferences with international participation on pending issues of physics, materials science, silicon technology and diagnostics, nanometre structures and devices based thereon.